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参数资料
| 型号： | APTGT400SK60D3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | IGBT |
| 封装： | ROHS COMPLIANT, D3, 11 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 210K |
| 代理商： | APTGT400SK60D3G |
APTGT400SK60D3G
APT
G
T
400SK60
D
3G
–
Rev
0
Septem
ber
,2008
www.microsemi.com
2- 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
500
A
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter saturation Voltage
VGE = 15V
IC = 400A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 6.4 mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
24
Coes
Output Capacitance
1.5
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.75
nF
QG
Gate charge
VGE=±15V, IC=300A
VCE=300V
4.2
C
Td(on)
Turn-on Delay Time
110
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
490
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 400A
RG = 1.5Ω
50
ns
Td(on)
Turn-on Delay Time
130
Tr
Rise Time
60
Td(off)
Turn-off Delay Time
530
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 400A
RG = 1.5Ω
70
ns
Tj = 25°C
3.2
Eon
Turn on Energy
Tj = 150°C
3.4
Tj = 25°C
15
Eoff
Turn off Energy
VGE = ±15V
VBus = 600V
IC = 400A
RG = 1.5Ω
Tj = 150°C
15.5
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 6s ; Tj = 150°C
2000
A
Reverse diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
500
IRRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
750
A
IF
DC Forward Current
Tc = 80°C
400
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 400A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
125
trr
Reverse Recovery Time
Tj = 150°C
180
ns
Tj = 25°C
18.8
Qrr
Reverse Recovery Charge
Tj = 150°C
39.5
C
Tj = 25°C
4.4
Err
Reverse Recovery Energy
IF = 400A
VR = 300V
di/dt =4800A/s
Tj = 150°C
9.6
mJ
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相关代理商/技术参数 |
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|---|---|
| APTGT400SK60D3G_11 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Buck Chopper Trench Field Stop IGBT3 Power Module |
| APTGT400TL65G | 功能描述:IGBT 650V SP6C 制造商:microsemi corporation 系列:* 零件状态:有效 标准包装:1 |
| APTGT400U120D4 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch Trench IGBT Power Module |
| APTGT400U120D4G | 功能描述:IGBT 1200V 600A 2250W D4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT400U170D4G | 功能描述:IGBT 1700V 800A 2080W D4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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