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参数资料
| 型号： | APTGT50X120RTP3 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| 中文描述： | 输入整流桥制动三相桥沟道IGBT功率模块 |
| 文件页数： | 2/4页 |
| 文件大小： | 216K |
| 代理商： | APTGT50X120RTP3 |
APTGT50X120RTP3
APTGT50X120BTP3
A
APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake
(only for APTGT50X120BTP3)
Absolute maximum ratings
Symbol
Parameter
V
CES
Collector - Emitter Breakdown Voltage
Max ratings
1200
55
35
80
±20
200
15
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
C
= 80°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
I
F
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
DC Forward Current
A
V
W
A
IGBT & Diode Inverter
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
75
50
100
±20
270
100A @ 1100V
50
100
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
T
C
= 80°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA Reverse Bias Save Operating Area
I
F
DC Forward Current
I
FRM
Repetitive Peak Forward Current
2.
Electrical Characteristics
Diodes Rectifier
Electrical Characteristics
Symbol Characteristic
I
R
Reverse Current
V
F
Forward Voltage
R
thJC
Junction to Case
IGBT Brake & Diode
(only for APTGT50X120BTP3)
Electrical Characteristics
Symbol Characteristic
I
CES
Zero Gate Voltage Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
A
V
W
t
p
= 1ms
A
Test Conditions
V
R
= 1600V
I
F
= 50A
Min
Typ
3
1.0
Max
0.65
Unit
mA
V
°C/W
T
j
= 150°C
T
j
= 150°C
Test Conditions
V
GE
= 0V, V
CE
= 1200V
V
GE
= 15V
I
C
= 35A
V
GE
= V
CE
, I
C
= 1.5mA
V
GE
= 20V, V
CE
= 0V
V
GE
= 0V,
V
CE
= 25V
f = 1MHz
V
GE
= 0V
I
F
= 35A
Min
Typ
4
1.8
2.2
5.8
Max Unit
2.2
6.5
500
2.7
0.6
1.5
mA
T
j
= 25°C
T
j
= 125°C
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
C
ies
C
oes
C
res
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
5.0
V
nA
2530
132
115
2.3
2.5
pF
T
j
= 25°C
T
j
= 125°C
IGBT
Diode
V
F
Forward Voltage
V
R
thJC
Junction to Case
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT50X170BTP3 | Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT50X170RTP3 | Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT600A60 | Phase leg Trench + Field Stop IGBT Power Module |
| APTGT600DU60 | Dual common source Trench + Field Stop IGBT Power Module |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT50X120RTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X170BTP3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT50X170BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X170RTP3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT50X170TRPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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