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参数资料
| 型号： | APTGT50X170BTP3 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| 中文描述： | 输入整流桥制动三相桥沟道IGBT功率模块 |
| 文件页数： | 1/4页 |
| 文件大小： | 216K |
| 代理商： | APTGT50X170BTP3 |
APTGT50X170RTP3
APTGT50X170BTP3
A
APT website – http://www.advancedpower.com
1 - 4
Trench IGBT
Power Module
Application
Features
All ratings @ T
j
= 25°C unless otherwise specified
1.
Absolute maximum ratings
Diode rectifier
Absolute maximum ratings
Symbol
V
RRM
Repetitive Peak Reverse Voltage
I
D
DC Forward Current
Parameter
Max ratings
1600
80
500
400
Unit
V
T
C
= 80°C
T
j
= 25°C
T
j
= 150°C
I
FSM
Surge Forward Current
t
p
= 10ms
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APTGT50X170RTP3: Without Brake (Pin 7 & 14 not connected)
17
18
19
20
21
9
8
7
4
5
6
22
23
24
1
2
3
10
11
12
14 13
16 15
V
CES
= 1700V
I
C
= 50A @ Tc = 80°C
AC Motor control
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Kelvin emitter for easy drive
Low stray inductance
Internal thermistor for temperature monitoring
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Input rectifier bridge + Brake
+ 3 Phase Bridge
相关PDF资料 |
PDF描述 |
|---|---|
| APTGT50X170RTP3 | Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT600A60 | Phase leg Trench + Field Stop IGBT Power Module |
| APTGT600DU60 | Dual common source Trench + Field Stop IGBT Power Module |
| APTGT600SK60 | Buck chopper Trench + Field Stop IGBT Power Module |
| APTGT600U120D4 | Single switch Trench IGBT Power Module |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT50X170BTPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X170RTP3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT Power Module |
| APTGT50X170TRPG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT50X60T3G | 功能描述:IGBT TRENCH 3PHASE BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT580U60D4G | 功能描述:IGBT 600V 760A 1600W D4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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