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参数资料
| 型号： | APTGT600U120D4 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Single switch Trench IGBT Power Module |
| 中文描述： | 单开关沟道IGBT功率模块 |
| 文件页数： | 1/3页 |
| 文件大小： | 157K |
| 代理商： | APTGT600U120D4 |
APTGT600U120D4
A
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
880
600
1500
±20
2500
2000A@900V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
SCSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short Circuit Safe Operating Area
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
3
5
2
1
5
3
4
1
2
V
CES
= 1200V
I
C
= 600A @ Tc = 80°C
Application
Features
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
-
M6 connectors for power
-
M4 connectors for signal
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Single switch
Trench IGBT
Power Module
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| APTGT75DH120T | Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT600U120D4G | 功能描述:IGBT 1200V 900A 2500W D4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT600U170D4G | 功能描述:IGBT TRENCH SGL SWITCH 1700V D4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT750U60D4G | 功能描述:IGBT 600V 1000A 2300W D4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT75A1202G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk |
| APTGT75A120D1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module |
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