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参数资料
| 型号： | APTGT75DH60T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 198K |
| 代理商： | APTGT75DH60T3G |
APTGT75DH60T3G
APT
G
T
75DH60T
3G
–
Rev
0
Apr
il,
2009
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
A
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 75A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 600A
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
4620
Coes
Output Capacitance
300
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
140
pF
QG
Gate charge
VGE=±15V, IC=75A
VCE=300V
0.8
C
Td(on)
Turn-on Delay Time
110
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
200
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω
40
ns
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
250
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω
60
ns
Tj = 25°C
0.35
Eon
Turn-on Switching Energy
Tj = 150°C
0.6
mJ
Tj = 25°C
2.2
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 300V
IC = 75A
RG = 4.7Ω
Tj = 150°C
2.6
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 6s ; Tj = 150°C
380
A
Diode ratings and characteristics (CR2 & CR3)
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
500
A
IF
DC Forward current
Tc = 80°C
75
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 75A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
100
trr
Reverse Recovery Time
Tj = 150°C
150
ns
Tj = 25°C
3.6
Qrr
Reverse Recovery Charge
Tj = 150°C
7.6
C
Tj = 25°C
0.85
Er
Reverse Recovery Energy
IF = 75A
VR = 300V
di/dt =2000A/s
Tj = 150°C
1.8
mJ
CR1 & CR4 are IGBT protection diodes only
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGT75DH60TG | 功能描述:IGBT MOD TRENCH ASYM BRIDGE SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT75DSK60T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Buck chopper Trench + Field Stop IGBT Power Module |
| APTGT75DSK60T3G | 功能描述:IGBT MOD TRENCH DL BUCK CHOP SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGT75DU120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source Fast Trench + Field Stop IGBT Power Module |
| APTGT75DU120TG | 功能描述:IGBT MOD TRENCH DUAL SOURCE SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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