参数资料
型号: APTGU70DU60T
元件分类: IGBT 晶体管
英文描述: 100 A, 600 V, N-CHANNEL IGBT
封装: MODULE-12
文件页数: 2/3页
文件大小: 192K
代理商: APTGU70DU60T
APTGU70DU60T
A
PT
G
U
70
D
U
60
T
R
ev
0
M
ay
,2
00
3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 375A
600
V
Tj = 25°C
375
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
3750
A
Tj = 25°C
2.2
2.7
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 70A
Tj = 125°C
2.1
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 2 mA
3
6
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±150
nA
Dynamic Characteritics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
9220
Coes
Output Capacitance
790
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
50
pF
Qg
Total gate Charge
270
Qge
Gate – Emitter Charge
60
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC = 70A
80
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
29
Td(off)
Turn-off Delay Time
64
Tf
Fall Time
45
ns
Eon1
Turn-on Switching Energy
770
Eon2
Turn-on Switching Energy
1288
Eoff
Turn-off Switching Energy
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 70A
RG = 2.5
704
900
J
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
29
Td(off)
Turn-off Delay Time
89
Tf
Fall Time
69
ns
Eon1
Turn-on Switching Energy
770
Eon2
Turn-on Switching Energy
1944
Eoff
Turn-off Switching Energy
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 70A
RG = 2.5
1230 1900
J
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
60
A
IF = 60A
1.8
IF = 120A
1.5
VF
Diode Forward Voltage
IF = 60A
Tj = 150°C
1.6
V
Tj = 25°C
50
trr
Reverse Recovery Time
IF = 60A
VR = 350V
di/dt =480A/s Tj = 100°C
80
ns
Tj = 25°C
200
Qrr
Reverse Recovery Charge
IF = 60A
VR = 350V
di/dt =480A/s Tj = 100°C
600
C
Eon2 includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
相关PDF资料
PDF描述
APTM100DUM90 78 A, 1000 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100DUM90 78 A, 1000 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100H45ST 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100H45ST 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100SK33T1G 23 A, 1000 V, 0.396 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
APTGV100H60BTPG 功能描述:IGBT NPT BST CHOP FULL BRDG SP6P RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGV100H60T3G 功能描述:IGBT NPT BST CHOP FULL BRDG SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGV15H120T3G 功能描述:IGBT NPT BST CHOP FULL BRDG SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGV25H120BG 功能描述:IGBT NPT BST CHOP FULL BRDG SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APTGV25H120T3G 功能描述:IGBT NPT BST CHOP FULL BRDG SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B