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参数资料
| 型号： | APTM100H45ST |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-14 |
| 文件页数： | 1/6页 |
| 文件大小： | 314K |
| 代理商： | APTM100H45ST |
APTM100H45ST
A
P
T
M
100H
45S
T
–
R
ev
2
J
une
,2004
APT website – http://www.advancedpower.com
1 – 6
O UT1 OUT2
G1
S1
CR2A
Q1
CR1A
CR3B
CR1B
G2
S2
NTC1
CR2B
Q2
CR4B
0/VBUS
CR4A
CR3A
G4
G3
S3
S4
Q4
NTC2
Q3
VBUS
OUT1
OUT2
NTC1
NTC2
G3
S3
VBUS
G1
S1
G4
G2
S2
0/VBUS
S4
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
18
ID
Continuous Drain Current
Tc = 80°C
14
IDM
Pulsed Drain current
72
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
450
m
PD
Maximum Power Dissipation
Tc = 25°C
357
W
IAR
Avalanche current (repetitive and non repetitive)
18
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 1000V
RDSon = 450m max @ Tj = 25°C
ID = 18A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Full bridge
Series & parallel diodes
MOSFET Power Module
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| APTM100H45ST | 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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| APTM100TA35FP | 22 A, 1000 V, 0.35 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM10DHM05 | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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