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参数资料
| 型号： | APTM100H45ST |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-14 |
| 文件页数： | 6/6页 |
| 文件大小： | 314K |
| 代理商： | APTM100H45ST |
APTM100H45ST
A
P
T
M
100H
45S
T
–
R
ev
2
J
une
,2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
160
5
10152025
303540
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=667V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
60
5
10
1520
25303540
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=667V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
5
1015202530
35
40
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
VDS=667V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
0.5
1
1.5
2
2.5
0
5
10
15
20
25
30
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=667V
ID=18A
TJ=125°C
L=100H
0
50
100
150
200
250
6
8
10
12
14
16
18
ID, Drain Current (A)
F
req
u
e
n
cy
(
k
H
z)
Operating Frequency vs Drain Current
VDS=667V
D=50%
RG=5
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.20.4 0.60.8
1
1.2 1.41.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
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