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参数资料
| 型号： | APTM100H45ST |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 1000 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-14 |
| 文件页数： | 3/6页 |
| 文件大小： | 314K |
| 代理商： | APTM100H45ST |
APTM100H45ST
A
P
T
M
100H
45S
T
–
R
ev
2
J
une
,2004
APT website – http://www.advancedpower.com
3 – 6
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 65°C
30
A
IF = 30A
1.9
2.3
IF = 60A
2.2
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.7
V
Tj = 25°C
290
trr
Reverse Recovery Time
IF = 30A
VR = 667V
di/dt = 200A/s
Tj = 125°C
390
ns
Tj = 25°C
670
Qrr
Reverse Recovery Charge
IF = 30A
VR = 667V
di/dt = 200A/s
Tj = 125°C
2350
nC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.35
RthJC
Junction to Case
Diode
1.2
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To Heatsink
M5
4.7
N.m
Wt
Package Weight
160
g
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
68
k
B 25/85
T25 = 298.16 K
4080
K
=
T
B
R
T
1
exp
25
85
/
25
Package outline
T: Thermistor temperature
RT: Thermistor value at T
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