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参数资料
| 型号： | APTM100A12STG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 68 A, 1000 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-9 |
| 文件页数： | 2/6页 |
| 文件大小： | 314K |
| 代理商： | APTM100A12STG |
APTM100A12ST
A
P
T
M
100A
12S
T
–
R
ev
1
J
une
,2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 750A
1000
V
VGS = 0V,VDS = 1000V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 34A
120
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
17.4
Coss
Output Capacitance
2.86
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.48
nF
Qg
Total gate Charge
616
Qgs
Gate – Source Charge
104
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 68A
388
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
121
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 68A
RG = 1.2
35
ns
Eon
Turn-on Switching Energy
2556
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 68A, RG = 1.2
1520
J
Eon
Turn-on Switching Energy
4148
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 68A, RG = 1.2
1804
J
Series Schottky diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
60
A
IF = 60A
0.77
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
0.62
V
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
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