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参数资料
| 型号： | APTM100A12ST |
| 元件分类： | JFETs |
| 英文描述： | 68 A, 1000 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-9 |
| 文件页数： | 1/6页 |
| 文件大小： | 314K |
| 代理商： | APTM100A12ST |
APTM100A12ST
A
P
T
M
100A
12S
T
–
R
ev
1
J
une
,2004
APT website – http://www.advancedpower.com
1 – 6
0/VBUS
VBUS
NT
C2
G2
S2
G1
S1
NT
C1
OUT
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
68
ID
Continuous Drain Current
Tc = 80°C
50
IDM
Pulsed Drain current
270
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
120
m
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
18
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 1000V
RDSon = 120m max @ Tj = 25°C
ID = 68A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals for signal and M5 for power for
easy PCB mounting
Phase leg
Schottky Series &
parallel diodes
MOSFET Power Module
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