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参数资料
| 型号： | APTM100A12ST |
| 元件分类： | JFETs |
| 英文描述： | 68 A, 1000 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-9 |
| 文件页数： | 6/6页 |
| 文件大小： | 314K |
| 代理商： | APTM100A12ST |
APTM100A12ST
A
P
T
M
100A
12S
T
–
R
ev
1
J
une
,2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=667V
RG=1.2
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
60
20
40
60
80
100
120
140
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=667V
RG=1.2
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
20
40
60
80
100
120
140
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(m
J)
VDS=667V
RG=1.2
TJ=125°C
L=100H
Eon
Eoff
0
2
4
6
8
10
02
468
Gate Resistance (Ohms)
Sw
it
ch
in
g
En
e
rg
y
(m
J
)
Switching Energy vs Gate Resistance
VDS=667V
ID=68A
TJ=125°C
L=100H
0
40
80
120
160
200
25
30
35
40
45
50
55
60
ID, Drain Current (A)
F
req
u
e
n
cy
(
k
H
z)
Operating Frequency vs Drain Current
VDS=667V
D=50%
RG=1.2
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.20.4 0.60.8
1
1.2 1.41.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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