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参数资料
| 型号： | APTM100A12ST |
| 元件分类： | JFETs |
| 英文描述： | 68 A, 1000 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-9 |
| 文件页数： | 3/6页 |
| 文件大小： | 314K |
| 代理商： | APTM100A12ST |
APTM100A12ST
A
P
T
M
100A
12S
T
–
R
ev
1
J
une
,2004
APT website – http://www.advancedpower.com
3 – 6
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 100°C
120
A
IF = 120A
1.9
2.5
IF = 240A
2.2
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
1.7
V
Tj = 25°C
280
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
1520
Qrr
Reverse Recovery Charge
IF = 120A
VR = 667V
di/dt = 400A/s
Tj = 125°C
7200
nC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.1
Series Diode
1
RthJC
Junction to Case
Parallel diode
0.46
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M5
2
3.5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
620
g
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
68
k
B 25/85
T25 = 298.16 K
4080
K
=
T
B
R
T
1
exp
25
85
/
25
Package outline
Ra
3
,2
T: Thermistor temperature
RT: Thermistor value at T
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