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参数资料
| 型号： | APTM100A13S |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 65 A, 1000 V, 0.156 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 1/6页 |
| 文件大小： | 289K |
| 代理商： | APTM100A13S |
APTM100A13S
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APT website – http://www.advancedpower.com
1 – 6
OUT
S1
G2
S2
G1
Q2
0/VBUS
VBUS
Q1
OUT
VBUS
S1
G1
0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
65
ID
Continuous Drain Current
Tc = 80°C
49
IDM
Pulsed Drain current
240
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
156
m
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
30
EAS
Single Pulse Avalanche Energy
1300
mJ
VDSS = 1000V
RDSon = 130m typ @ Tj = 25°C
ID = 65A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Phase leg
Series & parallel diodes
MOSFET Power Module
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