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参数资料
| 型号： | APTM100A13S |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 65 A, 1000 V, 0.156 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 3/6页 |
| 文件大小： | 289K |
| 代理商： | APTM100A13S |
APTM100A13S
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APT website – http://www.advancedpower.com
3 – 6
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 100°C
120
A
IF = 120A
1.9
2.5
IF = 240A
2.2
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
1.7
V
Tj = 25°C
280
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
1520
Qrr
Reverse Recovery Charge
IF = 120A
VR = 667V
di/dt = 400A/s
Tj = 125°C
7200
nC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.10
Diode series
0.65
RthJC
Junction to Case
Diode parallel
0.46
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque
Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
SP6 Package outline (dimensions in mm)
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相关代理商/技术参数 |
参数描述 |
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| APTM100A13SCG | 功能描述:PWR MODULE MOSFET 1000V 65A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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| APTM100A23STG | 功能描述:MOSFET PHASE LEG SER/PAR DIO SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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