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参数资料
| 型号： | APTM100A23SCT |
| 元件分类： | JFETs |
| 英文描述： | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 239K |
| 代理商： | APTM100A23SCT |
APTM100A23SCT
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APT website – http://www.advancedpower.com
2 - 4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 375A
1000
V
VGS = 0V,VDS= 1000V
Tj = 25°C
150
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 800V
Tj = 125°C
750
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 18A
230
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Ciss
Input Capacitance
8700
Coss
Output Capacitance
1430
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
240
pF
Qg
Total gate Charge
308
Qgs
Gate – Source Charge
52
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 36A
194
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
10
Td(off)
Turn-off Delay Time
30
Tf
Fall Time
Resistive Switching
VGS = 15V
VBus = 500V
ID = 36A
RG = 0.5
10
ns
Eon
Turn-on Switching Energy
767
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 36A, RG = 2.5
760
J
Eon
Turn-on Switching Energy
1255
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 36A, RG = 2.5
902
J
In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
60
A
IF = 60 A
1.15
IF = 120 A
1.05
VF
Diode Forward Voltage
IF = 60 A
Tj = 150°C
1
V
Tj = 25°C
40
trr
Reverse Recovery Time
IF = 60A
VR = 100V
di/dt = 480A/s
Tj = 100°C
60
ns
Tj = 25°C
240
Qrr
Reverse Recovery Charge
IF = 60A
VR = 100V
di/dt = 480A/s
Tj = 100°C
600
nC
相关PDF资料 |
PDF描述 |
|---|---|
| APTM100A23SCT | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23STG | 36 A, 1000 V, 0.27 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23ST | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23ST | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A40FT1G | 21 A, 1000 V, 0.48 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
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| APTM100AM90F | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg MOSFET Power Module |
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