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参数资料
| 型号： | APTM100A23SCTG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 7/7页 |
| 文件大小： | 295K |
| 代理商： | APTM100A23SCTG |
APTM100A23SCTG
A
P
T
M
100A
23S
C
T
G
–
R
ev
2
J
ul
y,
2006
www.microsemi.com
7 - 7
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
n
c
e
(°
C
/W
)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
10
20
30
40
00.5
1
1.522.533.5
VF Forward Voltage (V)
I F
F
o
rw
a
rd
C
u
rr
e
nt
(
A
)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
200
400
600
800
400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
I R
R
eve
rs
e
C
u
rr
en
t(
A
)
Capacitance vs.Reverse Voltage
0
400
800
1200
1600
1
10
100
1000
VR Reverse Voltage
C
,C
ap
aci
ta
n
ce
(p
F
)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
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| APTM100A23SCT | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23SCT | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23STG | 36 A, 1000 V, 0.27 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23ST | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A23ST | 36 A, 1000 V, 0.23 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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