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参数资料
| 型号： | APTM100H80FT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 11 A, 1000 V, 0.96 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 141K |
| 代理商： | APTM100H80FT1G |
APTM100H80FT1G
APT
M
100H80FT
1
G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VDS = 1000V
VGS = 0V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 9A
800
960
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
3876
Coss
Output Capacitance
405
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
52
pF
Qg
Total gate Charge
150
Qgs
Gate – Source Charge
26
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 9A
70
nC
Td(on)
Turn-on Delay Time
29
Tr
Rise Time
31
Td(off)
Turn-off Delay Time
105
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 667V
ID = 9A
RG = 4.7Ω
28
ns
Source - Drain diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
11
IS
Continuous Source current
(Body diode)
Tc = 80°C
8
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 9A
1
V
dv/dt
Peak Diode Recovery
25
V/ns
Tj = 25°C
245
trr
Reverse Recovery Time
Tj = 125°C
465
ns
Tj = 25°C
1.02
Qrr
Reverse Recovery Charge
IS = - 9A
VR = 100V
diS/dt = 100A/s
Tj = 125°C
2.57
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 9A
di/dt
≤ 1000A/s
VDD ≤ 400V
Tj ≤ 125°C
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