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参数资料
| 型号： | APTM100H80FT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 11 A, 1000 V, 0.96 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 141K |
| 代理商： | APTM100H80FT1G |
APTM100H80FT1G
APT
M
100H80FT
1
G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
5 – 5
TJ=25°C
TJ=125°C
0
5
10
15
20
25
0
0.3
0.6
0.9
1.2
VSD, Source to Drain Voltage (V)
I SD
,Revers
e
Drai
n
Curren
t(A)
Drain Current vs Source to Drain Voltage
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
erm
a
lI
m
ped
a
n
ce
(°
C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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