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参数资料
| 型号： | APTM100UM65D-A1N |
| 元件分类： | JFETs |
| 英文描述： | 145 A, 1000 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-4 |
| 文件页数： | 1/6页 |
| 文件大小： | 320K |
| 代理商： | APTM100UM65D-A1N |
APTM100UM65D-AlN
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J
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2004
APT website – http://www.advancedpower.com
1 – 6
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Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
145
ID
Continuous Drain Current
Tc = 80°C
110
IDM
Pulsed Drain current
580
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
65
m
PD
Maximum Power Dissipation
Tc = 25°C
3250
W
IAR
Avalanche current (repetitive and non repetitive)
30
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3200
mJ
VDSS = 1000V
RDSon = 65m max @ Tj = 25°C
ID = 145A @ Tc = 25°C
Application
Zero Current Switching resonant mode
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single switch
with Series diode
MOSFET Power Module
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM100UM65DAG | 功能描述:MOSFET N-CH 1000V 145A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM100UM65DAG_08 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Single switch with Series diode MOSFET Power Module |
| APTM100UM65D-ALN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch with Series diode MOSFET Power Module |
| APTM100UM65SAG | 功能描述:MOSFET N-CH 1000V 145A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM100UM65S-ALN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
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