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参数资料
| 型号： | APTM100UM65D-A1N |
| 元件分类： | JFETs |
| 英文描述： | 145 A, 1000 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-4 |
| 文件页数： | 6/6页 |
| 文件大小： | 320K |
| 代理商： | APTM100UM65D-A1N |
APTM100UM65D-AlN
A
P
T
M
100U
M
65D
-A
lN
–
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
40
80
120
160
50
94
138
182
226
270
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=670V
RG=0.75
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
50
94
138
182
226
270
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=670V
RG=0.75
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
10
12
14
16
50
94
138
182
226
270
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(m
J)
VDS=670V
RG=0.75
TJ=125°C
L=100H
Eon
Eoff
2
6
10
14
18
22
26
0
1234
56
78
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
ne
rg
y(
m
J)
Switching Energy vs Gate Resistance
VDS=670V
ID=145A
TJ=125°C
L=100H
Hard
switching
ZCS
0
50
100
150
200
250
300
15
35
55
75
95
115
135
ID, Drain Current (A)
F
req
ue
n
cy
(
kH
z)
Operating Frequency vs Drain Current
VDS=670V
D=50%
RG=0.75
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM100UM65DAG | 功能描述:MOSFET N-CH 1000V 145A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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| APTM100UM65SAG | 功能描述:MOSFET N-CH 1000V 145A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM100UM65S-ALN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
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