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参数资料
| 型号： | APTM10DHM05 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-8 |
| 文件页数： | 4/6页 |
| 文件大小： | 302K |
| 代理商： | APTM10DHM05 |
APTM10DHM05
A
P
T
M
10D
H
M
05–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
nc
e
(
°C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6V
7V
8V
0
200
400
600
800
1000
1200
0
4
8
1216202428
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t
(A
)
Low Voltage Output Characteristics
VGS=15V, 10V & 9V
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
40
80
120
160
200
240
01
2345
67
VGS, Gate to Source Voltage (V)
I D
,D
ra
in
C
u
rr
e
nt
(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
0
25
50
75 100 125 150 175 200
ID, Drain Current (A)
R
DS
(o
n
)D
rai
n
t
o
S
o
u
rce
O
N
R
e
si
st
an
ce
Normalized to
VGS=10V @ 125A
0
50
100
150
200
250
300
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM10DHM05G | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM10DHM09T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Asymmetrical - Bridge MOSFET Power Module |
| APTM10DHM09T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - MOSFET - Bulk |
| APTM10DHM09TG | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM10DSKM09T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Buck chopper MOSFET Power Module |
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