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参数资料
| 型号： | APTM10DHM05 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-8 |
| 文件页数： | 5/6页 |
| 文件大小： | 302K |
| 代理商： | APTM10DHM05 |
APTM10DHM05
A
P
T
M
10D
H
M
05–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
5 - 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
BV
DS
S,
D
ra
in
to
S
o
u
rc
e
B
re
ak
dow
n
Vo
lt
a
g
e
(No
rm
a
li
z
ed
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
D
S
(o
n
),
D
rai
n
to
S
o
u
rce
O
N
resi
st
an
ce
(N
o
rma
li
ze
d
)
VGS=10V
ID= 125A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
Thr
e
s
h
ol
d
V
o
lt
a
g
e
(N
or
m
a
li
ze
d)
Maximum Safe Operating Area
10ms
1ms
100s
10
100
1000
110
100
VDS, Drain to Source Voltage (V)
I D
,D
ra
in
C
u
rr
en
t(
A
)
Single pulse
TJ=150°C
limited by
RDSon
Ciss
Crss
Coss
1000
10000
100000
0
1020304050
VDS, Drain to Source Voltage (V)
C
,C
a
p
aci
ta
n
ce
(
p
F
)
Capacitance vs Drain to Source Voltage
VDS=20V
VDS=50V
VDS=80V
0
2
4
6
8
10
12
14
16
0
200
400
600
800
1000
Gate Charge (nC)
V
GS
,G
a
te
to
S
o
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=250A
TJ=25°C
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM10DHM05G | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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| APTM10DHM09T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - MOSFET - Bulk |
| APTM10DHM09TG | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM10DSKM09T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Buck chopper MOSFET Power Module |
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