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参数资料
| 型号： | APTM10TAM09FP |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 139 A, 100 V, 0.009 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-21 |
| 文件页数： | 5/6页 |
| 文件大小： | 311K |
| 代理商： | APTM10TAM09FP |
APTM10TAM09FP
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APT website – http://www.advancedpower.com
5 – 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
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Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
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VGS=10V
ID= 139A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
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Maximum Safe Operating Area
10ms
1ms
100s
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100
1000
110
100
VDS, Drain to Source Voltage (V)
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Single pulse
TJ=150°C
limited by
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1000
10000
100000
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1020304050
VDS, Drain to Source Voltage (V)
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,C
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aci
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Capacitance vs Drain to Source Voltage
VDS=20V
VDS=50V
VDS=80V
0
2
4
6
8
10
12
14
16
0
100
200
300
400
500
Gate Charge (nC)
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Gate Charge vs Gate to Source Voltage
ID=139A
TJ=25°C
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