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参数资料
| 型号： | APTM10TDUM19P |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 100 V, 0.019 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-21 |
| 文件页数： | 1/6页 |
| 文件大小： | 310K |
| 代理商： | APTM10TDUM19P |
APTM10TDUM19P
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APT website – http://www.advancedpower.com
1 – 6
S3/S4
G5
D5
S5
S5/S6
S1
D1
G1
S1/S2
S3
D3
G3
D6
S6
G6
D2
G2
S2
D4
S4
G4
G5
G6
S6
S5
G3
D 3
D 5
S3/S4
G4
S4
D 6
D 4
S3
D 1
S5/S6
S2
G2
S1
G1
D 2
S1/S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
70
ID
Continuous Drain Current
Tc = 80°C
50
IDM
Pulsed Drain current
220
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
19
m
PD
Maximum Power Dissipation
Tc = 25°C
208
W
IAR
Avalanche current (repetitive and non repetitive)
75
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
1500
mJ
VDSS = 100V
RDSon = 19m max @ Tj = 25°C
ID = 70A @ Tc = 25°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Triple dual common source
MOSFET Power Module
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