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参数资料
| 型号： | APTM10TDUM19P |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 100 V, 0.019 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-21 |
| 文件页数： | 6/6页 |
| 文件大小： | 310K |
| 代理商： | APTM10TDUM19P |
APTM10TDUM19P
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0
S
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2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
0
20
40
60
80
100
120
ID, Drain Current (A)
t d(
o
n)
an
d
t
d(o
ff)
(n
s
)
VDS=66V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0
20406080
100
120
ID, Drain Current (A)
t r
a
nd
t
f(n
s
)
VDS=66V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.25
0.5
0.75
0
20
40
60
80
100
120
ID, Drain Current (A)
E
on
a
nd
E
of
f(m
J
)
VDS=66V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
0.5
1
1.5
0
10
203040
5060
Gate Resistance (Ohms)
Sw
it
ch
in
g
En
e
rg
y
(m
J
)
Switching Energy vs Gate Resistance
VDS=66V
ID=70A
TJ=125°C
L=100H
Hard
switching
ZVS
ZCS
0
50
100
150
200
250
300
13
25
38
50
63
75
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
VDS=66V
D=50%
RG=5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t
(A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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参数描述 |
|---|---|
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