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参数资料
| 型号： | APTM10UM01FA |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 860 A, 100 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-5 |
| 文件页数： | 4/6页 |
| 文件大小： | 295K |
| 代理商： | APTM10UM01FA |
APTM10UM01FA
A
P
T
M
10U
M
01F
A
–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.06
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
nc
e
(
°C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6V
7V
8V
0
500
1000
1500
2000
2500
3000
3500
0
4
8
1216202428
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t
(A
)
Low Voltage Output Characteristics
VGS=15V, 10V & 9V
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
120
240
360
480
600
720
01
2345
67
VGS, Gate to Source Voltage (V)
I D
,D
ra
in
C
u
rr
e
nt
(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
0
100 200 300 400 500 600 700
ID, Drain Current (A)
R
DS
(o
n
)D
rai
n
t
o
S
o
u
rce
O
N
R
e
si
st
an
ce
Normalized to
VGS=10V @ 275A
0
200
400
600
800
1000
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
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