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参数资料
| 型号： | APTM120DA29T |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 34 A, 1200 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-12 |
| 文件页数： | 1/6页 |
| 文件大小： | 312K |
| 代理商： | APTM120DA29T |
APTM120DA29T
AP
T
M
12
0DA2
9T
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
1 – 6
G2
S2
VBUS
0/VBUS
CR1
OUT
Q2
VBUS
OUT
NTC2
NTC1
0/VBUS
S2
G2
VBUS
SENSE
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
34
ID
Continuous Drain Current
Tc = 80°C
25
IDM
Pulsed Drain current
136
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
290
m
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
22
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1200V
RDSon = 290m max @ Tj = 25°C
ID = 34A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Boost chopper
MOSFET Power Module
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PDF描述 |
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| APTM120DA29T | 34 A, 1200 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| APTM120DSK57T3 | 17 A, 1200 V, 0.57 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM120DA29TG | 功能描述:MOSFET N-CH 1200V 34A SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120DA30CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTM120DA30T1G | 功能描述:MOSFET N-CH 1200V 31A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120DA56T1G | 功能描述:MOSFET N-CH 1200V 18A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120DA68T1G | 功能描述:MOSFET N-CH 1200V 15A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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