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参数资料
| 型号： | APTM120DA30T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 31 A, 1200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 144K |
| 代理商： | APTM120DA30T1G |
AP9477GK
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
3
0
4
8
12
16
20
02
46
8
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T A =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
4
8
12
16
20
0246
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T A =150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0.6
1.0
1.4
1.8
2.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D =4 A
V G =10V
60
70
80
90
100
110
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =2 A
T A =25
o C
0
2
4
6
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
I S
(A
)
T j =25
o C
T j =150
o C
60.0
85.0
110.0
135.0
160.0
0
4
8
12
16
20
I D , Drain Current (A)
R
DS(ON)
(m
)
V GS =4.5V
V GS =10V
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