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参数资料
| 型号： | APTM120SK56T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 1200 V, 0.672 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 146K |
| 代理商： | APTM120SK56T1G |
APTM120SK56T1G
APT
M
120SK56T
1G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
1 – 5
NTC
56
Q1
7
8
12
11
4
3
CR2
12
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
18
ID
Continuous Drain Current
Tc = 80°C
13
IDM
Pulsed Drain current
104
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
672
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
14
A
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS 8 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Buck chopper
MOSFET Power Module
VDSS = 1200V
RDSon = 560mΩ typ @ Tj = 25°C
ID = 18A @ Tc = 25°C
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