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参数资料
| 型号： | APTM120SK56T1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 1200 V, 0.672 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 146K |
| 代理商： | APTM120SK56T1G |
APTM120SK56T1G
APT
M
120SK56T
1G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
3 – 5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
Ω
B 25/85
T25 = 298.15 K
3952
K
=
T
B
R
T
1
exp
25
85
/
25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Mosfet Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single P ulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
lIm
p
e
d
a
n
ce
(°
C
/W
)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
T: Thermistor temperature
RT: Thermistor value at T
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