- 您现在的位置：买卖IC网 > PDF目录57952 > APTM20AM05FTG (MICROSEMI POWER PRODUCTS GROUP) 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTM20AM05FTG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-15 |
| 文件页数： | 1/3页 |
| 文件大小： | 135K |
| 代理商： | APTM20AM05FTG |
APTM20AM05FTG
APT
M
20AM
05FTG
–
Rev2
Januar
y,
2009
wwwmicrosemi.com
1- 3
DK1
OUT
VBUS
NTC2
NTC1
NC
DK2
NC
G2
SK2
NC
SK1
0/VBUS
G1
NC
Absolute maximum ratings
* Limited by internal zener protection.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
333
ID
Continuous Drain Current
Tc = 80°C
249
IDM
Pulsed Drain current
700
A
VGS
Gate - Source Voltage
±15*
V
RDSon
Drain - Source ON Resistance
5
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
333
A
EAR
Repetitive Avalanche Energy
30
EAS
Single Pulse Avalanche Energy
1300
mJ
VDSS = 200V
RDSon = 5mΩ max @ Tj = 25°C
ID = 333A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS V FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Kelvin Drain for VDS monitoring
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals for signal and M5 for power for
easy PCB mounting
RoHS Compliant
Phase leg
MOSFET Power Module
相关PDF资料 |
PDF描述 |
|---|---|
| APTM20DAM04 | 372 A, 200 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM04 | 372 A, 200 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM05 | 317 A, 200 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM05 | 317 A, 200 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DUM05TG | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM20AM06S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg Series & parallel diodes MOSFET Power Module |
| APTM20AM06SG | 功能描述:MOSFET MOD PHASE LEG SER/PAR SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20AM08FT | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg MOSFET Power Module |
| APTM20AM08FTG | 功能描述:MOSFET MODULE PHASE LEG SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20AM10FT | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg MOSFET Power Module |
发布紧急采购，3分钟左右您将得到回复。