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参数资料
| 型号： | APTM20DUM05TG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-15 |
| 文件页数： | 1/3页 |
| 文件大小： | 129K |
| 代理商： | APTM20DUM05TG |
APTM20DUM05TG
APT
M
20DUM
05T
G
–
Rev
3
J
anuar
y,
2009
www.microsemi.com
1- 3
DK1
NC
SK1
NC
G2
SK2
NC
DK2
G1
NTC2
NTC1
NC
S
1
D1
D2
Absolute maximum ratings
* Limited by internal zener protection.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
333
ID
Continuous Drain Current
Tc = 80°C
249
IDM
Pulsed Drain current
700
A
VGS
Gate - Source Voltage
±15*
V
RDSon
Drain - Source ON Resistance
5
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
333
A
EAR
Repetitive Avalanche Energy
30
EAS
Single Pulse Avalanche Energy
1300
mJ
VDSS = 200V
RDSon = 5mΩ max @ Tj = 25°C
ID = 333A @ Tc = 25°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Kelvin Drain for VDS monitoring
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals for signal and M5 for power for
easy PCB mounting
RoHS Compliant
Dual common source
MOSFET Power Module
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