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参数资料
| 型号： | APTM20DUM05TG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-15 |
| 文件页数： | 2/3页 |
| 文件大小： | 129K |
| 代理商： | APTM20DUM05TG |
APTM20DUM05TG
APT
M
20DUM
05T
G
–
Rev
3
J
anuar
y,
2009
www.microsemi.com
2- 3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 200V
Tj = 25°C
300
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
2000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 166.5A
5
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 8mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±15 V, VDS = 0V
±250
nA
R
Gate Source input impedance
10
k
Ω
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
40.8
Coss
Output Capacitance
9.1
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
3.1
nF
Qg
Total gate Charge
1184
Qgs
Gate – Source Charge
376
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 333A
600
nC
Td(on)
Turn-on Delay Time
15
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
50
Tf
Fall Time
Resistive Switching
VGS = 15V
VBus = 100V
ID = 333A
RG = 0.22 Ω
10
ns
Source - Drain diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
333
IS
Continuous Source current (Body diode)
Tc = 80°C
249
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 333A
1.3
V
trr
Reverse Recovery Time
160
ns
Qrr
Reverse Recovery Charge
IS = - 333A, VR = 100V
diS/dt = 800A/s
10.4
C
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
RthJC
Junction to Case Thermal Resistance
0.1
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M5
2
3.5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
550
g
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