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参数资料
| 型号： | APTM20AM06S |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 300 A, 200 V, 0.006 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/6页 |
| 文件大小： | 291K |
| 代理商： | APTM20AM06S |
APTM20AM06S
A
PT
M
20A
M
06S
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1- 6
OUT
VBUS
S1
G1
0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
300
ID
Continuous Drain Current
Tc = 80°C
225
IDM
Pulsed Drain current
1200
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
6
m
W
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
30
EAS
Single Pulse Avalanche Energy
1300
mJ
VDSS = 200V
RDSon = 6m
W max @ Tj = 25°C
ID = 300A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Phase leg
Series & parallel diodes
MOSFET Power Module
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