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参数资料
| 型号： | APTM20AM10ST |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 175 A, 200 V, 0.01 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-10 |
| 文件页数： | 2/6页 |
| 文件大小： | 298K |
| 代理商： | APTM20AM10ST |
APTM20AM10ST
A
PT
M
20A
M
10S
T
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 375A
200
V
VGS = 0V,VDS = 200V
Tj = 25°C
150
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
750
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 87.5A
10
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
13.7
Coss
Output Capacitance
4.36
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.19
nF
Qg
Total gate Charge
224
Qgs
Gate – Source Charge
86
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 150A
94
nC
Td(on)
Turn-on Delay Time
28
Tr
Rise Time
56
Td(off)
Turn-off Delay Time
81
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 150A
RG = 2.5
99
ns
Eon
Turn-on Switching Energy
u
926
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5
910
J
Eon
Turn-on Switching Energy
u
1216
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5
1062
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
90
A
IF = 90A
1.1
1.15
IF = 180A
1.4
VF
Diode Forward Voltage
IF = 90A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
IF = 90A
VR = 133V
di/dt = 600A/s
Tj = 125°C
48
ns
Tj = 25°C
99
Qrr
Reverse Recovery Charge
IF = 90A
VR = 133V
di/dt = 600A/s
Tj = 125°C
450
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
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