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参数资料
| 型号： | APTM20DHM16T |
| 元件分类： | JFETs |
| 英文描述： | 104 A, 200 V, 0.016 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-14 |
| 文件页数： | 1/6页 |
| 文件大小： | 295K |
| 代理商： | APTM20DHM16T |
APTM20DHM16T
A
PT
M
20D
H
M
16T
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 6
NTC2
S4
G4
VBUS SENSE
VBUS
Q1
G1
S1
OUT1
OUT2
Q4
CR3
0/VBU S
CR2
0/VBU S SENSE
NT C1
NTC2
OUT2
OUT1
VBUS
SENSE
S4
G4
S1
NTC1
0/VBUS
SENSE
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc= 25°C
104
ID
Continuous Drain Current
Tc = 80°C
77
IDM
Pulsed Drain current
416
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
16
m
W
PD
Maximum Power Dissipation
Tc = 25°C
390
W
IAR
Avalanche current (repetitive and non repetitive)
100
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 200V
RDSon = 16m
W max @ Tj = 25°C
ID = 104A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Asymmetrical - Bridge
MOSFET Power Module
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM20DHM16T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Asymmetrical - Bridge MOSFET Power Module |
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| APTM20DHM20TG | 功能描述:MOSFET MOD ASSYMMETRIC BRDG SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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