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参数资料
| 型号： | APTM20DHM16T |
| 元件分类： | JFETs |
| 英文描述： | 104 A, 200 V, 0.016 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-14 |
| 文件页数： | 6/6页 |
| 文件大小： | 295K |
| 代理商： | APTM20DHM16T |
APTM20DHM16T
A
PT
M
20D
H
M
16T
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
0
255075
100 125 150 175
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s)
VDS=133V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0
25
50
75
100 125 150 175
ID, Drain Current (A)
t r
an
d
t
f(n
s
)
VDS=133V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
0
25
50
75
100 125 150 175
ID, Drain Current (A)
E
on
an
d
E
of
f(m
J
)
VDS=133V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0.5
1
1.5
2
2.5
3
0
5 10 15 20 25 30 35 40 45 50
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=133V
ID=104A
TJ=125°C
L=100H
0
50
100
150
200
250
300
25
38
50
63
75
88
100
ID, Drain Current (A)
F
req
ue
nc
y
(
k
H
z)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=5
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.20.4 0.60.8
1
1.2 1.41.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,Re
ve
rs
e
Dra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| APTM20DHM20TG | 功能描述:MOSFET MOD ASSYMMETRIC BRDG SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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