- 您现在的位置：买卖IC网 > PDF目录36741 > APTM20DHM16T 104 A, 200 V, 0.016 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTM20DHM16T |
| 元件分类： | JFETs |
| 英文描述： | 104 A, 200 V, 0.016 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-14 |
| 文件页数： | 5/6页 |
| 文件大小： | 295K |
| 代理商： | APTM20DHM16T |
APTM20DHM16T
A
PT
M
20D
H
M
16T
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
5 – 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
BV
DS
S
,D
rai
n
t
o
S
o
u
rc
eB
rea
kd
ow
n
Vo
lt
ag
e
(No
rm
a
li
ze
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
D
S
(o
n)
,D
ra
in
t
o
S
o
u
rce
O
N
r
e
si
st
a
n
c
e
(No
rm
al
iz
e
d
)
VGS=10V
ID= 52A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
T
h
re
sh
ol
d
Vo
lt
a
g
e
(No
rm
al
iz
e
d
)
Maximum Safe Operating Area
100ms
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t(A)
Single pulse
TJ=150°C
limited by
RDSon
Ciss
Crss
Coss
100
1000
10000
100000
0
1020304050
VDS, Drain to Source Voltage (V)
C,
Ca
p
ac
ita
n
c
e(p
F
)
Capacitance vs Drain to Source Voltage
VDS=40V
VDS=100V
VDS=160V
0
2
4
6
8
10
12
14
0
20406080 100 120 140 160
Gate Charge (nC)
V
GS
,
G
a
te
t
o
S
o
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=104A
TJ=25°C
相关PDF资料 |
PDF描述 |
|---|---|
| APTM20DUM05T | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DUM05T | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DUM05 | 317 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DUM05 | 317 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DUM08T | 208 A, 200 V, 0.008 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM20DHM16T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Asymmetrical - Bridge MOSFET Power Module |
| APTM20DHM16TG | 功能描述:MOSFET MOD ASSYMMETRIC BRDG SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20DHM20T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Asymmetrical - Bridge MOSFET Power Module |
| APTM20DHM20TG | 功能描述:MOSFET MOD ASSYMMETRIC BRDG SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20DUM04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source MOSFET Power Module |
发布紧急采购，3分钟左右您将得到回复。