- 您现在的位置：买卖IC网 > PDF目录51276 > APTM20DAM08TG (MICROSEMI CORP) 208 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTM20DAM08TG |
| 厂商： | MICROSEMI CORP |
| 元件分类： | JFETs |
| 英文描述： | 208 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP4, 12 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 284K |
| 代理商： | APTM20DAM08TG |
APTM20DAM08TG
A
P
T
M
20D
A
M
08T
G
–
R
ev
4
J
ul
y,
2006
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 200V
Tj = 25°C
150
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
750
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 104A
8
10
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14.4
Coss
Output Capacitance
4.66
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.29
nF
Qg
Total gate Charge
280
Qgs
Gate – Source Charge
106
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 208A
134
nC
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
64
Td(off)
Turn-off Delay Time
88
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 208A
RG = 2.5
116
ns
Eon
Turn-on Switching Energy
1698
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 208A, RG = 2.5
1858
J
Eon
Turn-on Switching Energy
1872
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 208A, RG = 2.5
1972
J
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
500
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
750
A
IF
DC Forward Current
Tc = 80°C
180
A
IF = 180A
1.1
1.15
IF = 360A
1.4
VF
Diode Forward Voltage
IF = 180A
Tj = 125°C
0.9
V
Tj = 25°C
31
trr
Reverse Recovery Time
Tj = 125°C
60
ns
Tj = 25°C
180
Qrr
Reverse Recovery Charge
IF = 180A
VR = 133V
di/dt = 600A/s
Tj = 125°C
750
nC
相关PDF资料 |
PDF描述 |
|---|---|
| APTM20DAM08T | 208 A, 200 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM08T | 208 A, 200 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DHM08 | 208 A, 200 V, 0.008 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DHM08 | 208 A, 200 V, 0.008 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DHM20T | 89 A, 200 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM20DAM10T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Boost chopper MOSFET Power Module |
| APTM20DAM10TG | 功能描述:MOSFET N-CH 200V 175A SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20DHM08 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Asymmetrical - Bridge MOSFET Power Module |
| APTM20DHM08G | 功能描述:MOSFET MOD ASSYMMETRIC BRDG SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20DHM10 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Asymmetrical - Bridge MOSFET Power Module |
发布紧急采购，3分钟左右您将得到回复。