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参数资料
| 型号： | APTM20DHM10 |
| 元件分类： | JFETs |
| 英文描述： | 175 A, 200 V, 0.01 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-8 |
| 文件页数： | 3/6页 |
| 文件大小： | 294K |
| 代理商： | APTM20DHM10 |
APTM20DHM10
A
PT
M
20D
H
M
10
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
3 – 6
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.18
RthJC
Junction to Case
Diode
0.32
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
Package outline
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| APTM20DUM05T | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DUM05T | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DUM05 | 317 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM20DHM10G | 功能描述:MOSFET MOD ASSYMMETRIC BRDG SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20DHM16T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Asymmetrical - Bridge MOSFET Power Module |
| APTM20DHM16T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Asymmetrical - Bridge MOSFET Power Module |
| APTM20DHM16TG | 功能描述:MOSFET MOD ASSYMMETRIC BRDG SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20DHM20T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Asymmetrical - Bridge MOSFET Power Module |
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