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参数资料
| 型号： | APTM20DUM05 |
| 元件分类： | JFETs |
| 英文描述： | 317 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 2/6页 |
| 文件大小： | 288K |
| 代理商： | APTM20DUM05 |
APTM20DUM05
A
PT
M
20D
U
M
05
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
200
V
VGS = 0V,VDS = 200V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 158.5A
5
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
27.4
Coss
Output Capacitance
8.72
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.38
nF
Qg
Total gate Charge
448
Qgs
Gate – Source Charge
172
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 300A
188
nC
Td(on)
Turn-on Delay Time
28
Tr
Rise Time
56
Td(off)
Turn-off Delay Time
81
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 300A
RG = 1.2
W
99
ns
Eon
Turn-on Switching Energy
u
1852
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2
1820
J
Eon
Turn-on Switching Energy
u
2432
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 300A, RG = 1.2
2124
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
317
IS
Continuous Source current
(Body diode)
Tc = 80°C
237
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 300A
1.3
V
dv/dt
Peak Diode Recovery
w
5
V/ns
trr
Reverse Recovery Time
284
ns
Qrr
Reverse Recovery Charge
IS = -300A, VR = 100V
diS/dt = 400A/s
12.24
C
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS
- 300A
di/dt
700A/s
VR
VDSS
Tj
150°C
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