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参数资料
| 型号： | APTM20DUM05 |
| 元件分类： | JFETs |
| 英文描述： | 317 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-7 |
| 文件页数： | 4/6页 |
| 文件大小： | 288K |
| 代理商： | APTM20DUM05 |
APTM20DUM05
A
PT
M
20D
U
M
05
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
lI
m
pe
da
nc
e
(°
C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
9V
0
200
400
600
800
1000
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
200
400
600
800
2345
6789
VGS, Gate to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
1.15
1.2
0
100
200
300
400
ID, Drain Current (A)
R
DS
(o
n)
D
rai
n
t
o
So
ur
ce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 158.5A
0
40
80
120
160
200
240
280
320
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,
DC
Dra
in
Cu
rre
n
t(A)
DC Drain Current vs Case Temperature
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|---|---|
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| APTM20DUM10T | 175 A, 200 V, 0.01 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DUM10T | 175 A, 200 V, 0.01 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM20DUM05G | 功能描述:MOSFET MOD DUAL COMMON SRC SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20DUM05T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source MOSFET Power Module |
| APTM20DUM05TG | 功能描述:MOSFET MOD DUAL COMMON SRC SP8 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20DUM08TG | 功能描述:MOSFET MOD DUAL COMMON SRC SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM20DUM10T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual common source MOSFET Power Module |
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