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参数资料
| 型号： | APTM20HM20STG |
| 元件分类： | JFETs |
| 英文描述： | 89 A, 200 V, 0.024 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, MODULE-14 |
| 文件页数： | 5/6页 |
| 文件大小： | 314K |
| 代理商： | APTM20HM20STG |
APTM20HM20STG
A
P
T
M
20H
M
20S
T
G
–
R
ev
3
N
ove
m
be
r,
2005
APT website – http://www.advancedpower.com
5 – 6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
BV
DS
S,
D
ra
in
to
S
o
u
rc
e
B
re
ak
dow
n
Vo
lt
a
g
e
(No
rm
a
li
z
ed
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(o
n
),
D
rai
n
t
o
S
o
u
rce
O
N
r
esi
st
an
ce
(N
or
m
a
li
ze
d)
VGS=10V
ID= 44.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
Thr
e
s
hol
d
V
o
lt
a
g
e
(N
or
m
a
li
ze
d)
Maximum Safe Operating Area
DC line
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,D
ra
in
C
u
rr
e
nt
(
A
)
limited by
RDSon
Single pulse
TJ=150°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
1020304050
VDS, Drain to Source Voltage (V)
C
,C
a
p
aci
ta
n
ce
(
p
F
)
Capacitance vs Drain to Source Voltage
VDS=40V
VDS=100V
VDS=160V
0
2
4
6
8
10
12
0
25
50
75
100
125
Gate Charge (nC)
V
GS
,G
a
te
to
S
o
u
rc
e
V
o
lt
a
g
e(V
)
Gate Charge vs Gate to Source Voltage
ID=75A
TJ=25°C
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