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参数资料
| 型号： | APTM20HM20STG |
| 元件分类： | JFETs |
| 英文描述： | 89 A, 200 V, 0.024 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, MODULE-14 |
| 文件页数： | 6/6页 |
| 文件大小： | 314K |
| 代理商： | APTM20HM20STG |
APTM20HM20STG
A
P
T
M
20H
M
20S
T
G
–
R
ev
3
N
ove
m
be
r,
2005
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
90
0
25
50
75
100
125
150
ID, Drain Current (A)
t d(
on)
a
nd
t
d(
o
ff
)(n
s
)
VDS=133V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
ID, Drain Current (A)
t r
a
nd
t
f(n
s
)
VDS=133V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
200
400
600
800
1000
1200
0
25
50
75
100
125
150
ID, Drain Current (A)
E
on
an
d
E
of
f(
J
)
VDS=133V
RG=5
TJ=125°C
L=100H
Eon
Eoff
250
500
750
1000
1250
1500
0
5
10 15 20 25 30 35 40
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
J)
Switching Energy vs Gate Resistance
VDS=133V
ID=75A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
10
20
30
40
50
60
70
80
ID, Drain Current (A)
F
req
ue
n
cy
(
kH
z)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=5
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VSD, Source to Drain Voltage (V)
I DR
,R
ev
er
se
D
rai
n
C
u
rr
en
t
(A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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