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参数资料
| 型号： | APTM20SKM05 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 317 A, 200 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-5 |
| 文件页数： | 6/6页 |
| 文件大小： | 293K |
| 代理商： | APTM20SKM05 |
APTM20SKM05
A
PT
M
20S
K
M
05
–
R
ev
2
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
90
50
150
250
350
450
550
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s)
VDS=133V
RG=1.2
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
50
150
250
350
450
550
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=133V
RG=1.2
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
50
150
250
350
450
550
ID, Drain Current (A)
E
on
an
d
E
of
f(m
J)
VDS=133V
RG=1.2
TJ=125°C
L=100H
Eon
Eoff
2
2.5
3
3.5
4
4.5
5
5.5
6
02.557.5
10
12.5
15
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
Switching Energy vs Gate Resistance
VDS=133V
ID=300A
TJ=125°C
L=100H
0
50
100
150
200
250
300
350
30
70
110
150
190
230
270
ID, Drain Current (A)
F
req
u
e
nc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=1.2
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VSD, Source to Drain Voltage (V)
I DR
,Re
ve
rs
e
Dra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM20SKM05G | 功能描述:MOSFET N-CH 200V 317A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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| APTM20SKM10T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper MOSFET IGBT Power Module |
| APTM20SKM10TG | 功能描述:MOSFET N-CH 200V 175A SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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