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参数资料
| 型号： | APTM20UM09SG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 195 A, 200 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 5/7页 |
| 文件大小： | 285K |
| 代理商： | APTM20UM09SG |
APTM20UM09S
A
PT
M
20U
M
09S
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
5 – 7
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
lI
m
pe
da
nc
e
(°
C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6V
7V
8V
0
100
200
300
400
500
600
0
2.5
5
7.5
10
12.5
15
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
VGS=15 & 10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
100
200
300
400
500
600
2345678
9
10
VGS, Gate to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
1.15
1.2
0
100
200
300
400
ID, Drain Current (A)
R
DS
(o
n)
D
rai
n
t
o
So
ur
ce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 74.5A
0
40
80
120
160
200
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,
DC
Dra
in
Cu
rre
n
t(A)
DC Drain Current vs Case Temperature
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