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参数资料
| 型号： | APTM20UM09S |
| 元件分类： | JFETs |
| 英文描述： | 195 A, 200 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/7页 |
| 文件大小： | 285K |
| 代理商： | APTM20UM09S |
APTM20UM09S
A
PT
M
20U
M
09S
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 7
D
Q1
G
S
CR1
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
195
ID
Continuous Drain Current
Tc = 80°C
145
IDM
Pulsed Drain current
780
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
9
m
W
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
65
A
EAR
Repetitive Avalanche Energy
30
EAS
Single Pulse Avalanche Energy
1300
mJ
VDSS = 200V
RDSon = 9m max @ Tj = 25°C
ID = 195A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Low stray inductance
-
M6 power connectors
-
M4 signal connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Single switch
Series & parallel diodes
MOSFET Power Module
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM20UM09SG | 功能描述:MOSFET N-CH 200V 195A J3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM50A15FT1G | 功能描述:MOSFET MODULE PHASE LEG SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM50A15UT1G | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTM50AM17F | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Phase leg MOSFET Power Module |
| APTM50AM17FG | 功能描述:MOSFET MODULE PHASE LEG SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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