参数资料
型号: APTM20UM09S
元件分类: JFETs
英文描述: 195 A, 200 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
文件页数: 3/7页
文件大小: 285K
代理商: APTM20UM09S
APTM20UM09S
A
PT
M
20U
M
09S
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
3 – 7
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 90°C
100
A
IF = 100A
1
1.1
IF = 200A
1.4
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
0.9
V
Tj = 25°C
60
trr
Reverse Recovery Time
IF = 100A
VR = 133V
di/dt = 200A/s
Tj = 125°C
110
ns
Tj = 25°C
200
Qrr
Reverse Recovery Charge
IF = 100A
VR = 133V
di/dt = 200A/s
Tj = 125°C
840
nC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.16
Series diode
0.46
RthJC
Junction to Case
Parallel diode
0.6
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
M4
1.2
Torque Mounting torque
M6
3
5
N.m
Wt
Package Weight
400
g
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