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参数资料
| 型号： | APTM50AM24SC |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 150 A, 500 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/7页 |
| 文件大小： | 306K |
| 代理商： | APTM50AM24SC |
APTM50AM24SC
A
P
T
M
50A
M
24S
C
–
R
ev
1
J
une
,2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1.5mA
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
500
A
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
3
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 75A
24
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 6mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±500
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
19.6
Coss
Output Capacitance
4.2
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.3
nF
Qg
Total gate Charge
434
Qgs
Gate – Source Charge
120
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 150A
216
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
17
Td(off)
Turn-off Delay Time
50
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 150A
RG = 0.8
41
ns
SiC Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
400
1600
IRRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
800
8000
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 125°C
80
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 80A
Tj = 175°C
2.0
2.4
V
QC
Total Capacitive Charge
IF = 80A, VR = 300V
di/dt =2000A/s
112
nC
f = 1MHz, VR = 200V
520
Q
Total Capacitance
f = 1MHz, VR = 400V
400
pF
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